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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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60 mA Bidirectional Current Gating in Vanadium-Dioxide-Based Planar Device Using CO₂ Laser.

Jihoon Kim1, Sun Jae Jeong2, Sungwook Choi2

  • 1School of Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Korea.

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|November 25, 2018
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Summary

Researchers demonstrated 60 mA bidirectional current gating using vanadium dioxide (VO₂) thin films and a CO₂ laser. This photothermally induced phase transition in VO₂ offers a novel approach for advanced electronic devices.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Optoelectronics

Background:

  • Vanadium dioxide (VO₂) exhibits a thermally induced semiconductor-to-metal phase transition.
  • Controlling this phase transition with external stimuli is crucial for developing novel electronic and optoelectronic devices.
  • Previous methods for VO₂-based current gating have limitations in achieved current and switching contrast.

Purpose of the Study:

  • To demonstrate high-current bidirectional gating in a two-terminal VO₂ device.
  • To investigate the effect of CO₂ laser parameters on the current gating performance.
  • To achieve the highest reported current gating and switching contrast in VO₂ devices using laser irradiation.

Main Methods:

  • Fabrication of a two-terminal planar device using a highly resistive vanadium dioxide (VO₂) thin film grown by pulsed laser deposition.
  • Irradiation of the VO₂ device with a CO₂ laser (10.6 μm) to induce a photothermally driven phase transition.
  • Systematic investigation of laser modulation parameters (pulse width, repetition rate) and their influence on transient current responses.

Main Results:

  • Achieved 60 mA bidirectional current gating in the VO₂ device.
  • Demonstrated stable current gating at repetition rates of 0.5–3.0 Hz with a minimum pulse energy of ~766 mJ.
  • Obtained a switching contrast of ~11089 between off- and on-state currents at a bias of ~5.4 V.
  • Reported the highest on-state current (60 mA) and switching contrast to date for CO₂ laser-gated VO₂ devices.

Conclusions:

  • Photothermally induced phase transition in VO₂ thin films enables efficient bidirectional current gating.
  • The demonstrated 60 mA current gating and high switching contrast represent a significant advancement for VO₂-based optoelectronic applications.
  • This method offers a promising pathway for developing high-performance laser-controlled electronic switches.