Related Experiment Video
Updated: Feb 2, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
The Optimal Design of Field Ring for Reliability and Realization of 3.3 kV Insulated-Gate Bipolar Transistor Power
Myeong-Choel Shin1, Hyun-Ah Kim1, Byung-Sub Ahn1
1Department of Photovoltaic Engineering, Far East University, Chungbuk 369-700, Republic of Korea.
Abstract:
This research was about field ring for 3.3 kV planar gate power IGBT. Therefore, we designed optimal field ring for 3.3 kV power IGBT and we analyzed the electrical characteristics of 3.3 kV planar gate power IGBT according to parameters of field ring. Based on this background, we obtained 3.3 kV high breakdown voltage and 2.9 V on state voltage drop for 3.3 kV planar gate power IGBT. To obtain high breakdown voltage, we confirm that the counts of field ring were 23. And we obtained optimal parameters. The gap distance between field rings to field ring was 13 μm and the width of field ring was 5 μm. This design technology will be adapt field stop IGBT and super junction IGBT. Thyristor device for power conversion switch will be replaced to super high voltage power IGBT.
More Related Videos
Related Concept Videos
Bipolar Junction Transistor
Field Effect Transistor
Design Example: Forces in Sluice Gate
Key variables in...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Reliability and Validity
Conductors and Insulators
Most metals are conductors. Their atomic configuration is such that one or more electron(s) are loosely bound to the nucleus in each atom. Thus, a sea of mobile electrons are available in them, known as free electrons. Their easy...

