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Plasma dispersion effect based super-resolved imaging in silicon.

Hadar Pinhas, Omer Wagner, Yossef Danan

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    |November 25, 2018
    PubMed
    Summary
    This summary is machine-generated.

    A novel method uses a 532nm pump laser to shape a 1550nm IR laser beam in silicon via plasma dispersion effect (PDE). This technique enables overcoming diffraction limits for advanced silicon microscopy and electrical measurements.

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    Area of Science:

    • Optics and Photonics
    • Materials Science
    • Semiconductor Physics

    Background:

    • Current limitations in silicon microscopy hinder detailed analysis of integrated circuits.
    • Overcoming the diffraction resolution limit is crucial for advanced semiconductor research.

    Purpose of the Study:

    • To introduce a new method for shaping pulsed infrared laser beams in silicon.
    • To enable high-resolution imaging and contactless electrical measurements in operational silicon integrated circuits.

    Main Methods:

    • Utilizing the plasma dispersion effect (PDE) for laser beam shaping.
    • Employing a 532nm pump laser (Gaussian or donut mode) collinearly with a 1550nm IR probe beam on silicon.
    • Controlling the spatial intensity distribution of the pump beam to modify the IR beam's point spread function (PSF).

    Main Results:

    • Demonstrated shaping of a 1550nm IR laser beam in silicon using a 532nm pump laser.
    • The PDE was effectively used to control the lateral transmission of the IR probe beam.
    • The shaped IR probe beam facilitates imaging and electrical measurements in silicon integrated circuits.

    Conclusions:

    • The proposed method successfully shapes IR laser beams in silicon, overcoming diffraction limits.
    • This technique offers a promising approach for advanced microscopy and in-situ electrical characterization of silicon devices.
    • The PDE-based shaping method opens new avenues for non-invasive analysis of semiconductor materials and devices.