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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
S Meuret1, M Solà Garcia1, T Coenen2
1Center for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands.
This study compares three time-resolved cathodoluminescence (CL) techniques for nanoscale optical property imaging. The g(2) method offers superior spatial resolution, while pulsed electron beam methods provide detailed temporal dynamics for materials analysis.
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