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Seil Kim1, Min-Pyo Lee2, Sung-June Hong3
1Department of Radio Science and Engineering, Chungnam National University, Daejeon 34134, Korea. ksl4896@naver.com.
This study introduces a Ku-band 50 W power amplifier using Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology. Asymmetric power combining techniques achieve high output power and efficiency for radar applications.
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