Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence

Shaoteng Wu1,2,3,4, Liancheng Wang5, Zhiqiang Liu1,2,3,4,6

  • 1College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, People's Republic of China.

Nanotechnology
|November 29, 2018
PubMed

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