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Updated: Feb 2, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence
Shaoteng Wu1,2,3,4, Liancheng Wang5, Zhiqiang Liu1,2,3,4,6
1College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, People's Republic of China.
Abstract:
Here, we demonstrate the growth of horizontal GaN nanowires (NWs) on silicon (111) by a surface-directed vapor-liquid-solid growth. The influence of the Au/Ni catalysts migration and coalescence on the growth of the NWs has been systematically studied. 2D root-like branched NWs were gown spontaneously through catalyst migration. Furthermore, a novel phenomenon that a catalyst particle is embedded in a horizontal NW was observed and attributed the destruction of growth steady state due to the catalysts coalescence. The transmission electron microscopy and photoluminescence, cathodoluminescence measurement demonstrated that the horizontal NWs exhibit single crystalline structures and good optical properties. Our work sheds light on the horizontal NWs growth and should facilitate the development of highly integrated III-V nanodevices on silicon.
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