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Published on: November 6, 2016
V₂O₅ Thin Films as Nitrogen Dioxide Sensors †
Krystyna Schneider1, Wojciech Maziarz2
1AGH University of Science and Technology, Faculty of Computer Science, Electronics and Telecommunications, Department of Electronics, 30-059 Krakow, Poland. kryschna@agh.edu.pl.
Abstract:
Vanadium pentoxide thin films were deposited onto insulating support by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. X-ray diffraction at glancing incidence (GIXD) and Scanning Electronic Microscopy (SEM) were used for structural and phase characterization. Thickness of the films was determined by the profilometry. It has been confirmed by GIXD that the deposited films are composed of V₂O₅ phase. The gas sensing properties of V₂O₅ thin films were investigated at temperatures from range 410⁻617 K upon NO₂ gas of 4⁻20 ppm. The investigated material exhibited good response and reversibility towards nitrogen dioxide. The effect of metal-insulator transition (MIT) on sensor performance has been observed and discussed for the first time. It was found that a considerable increase of the sensor sensitivity occured above 545 K, which is related to postulated metal-insulator transition.
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