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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Spin-polarized Fermi surface, hole-doping and band gap in graphene with boron impurities

Alexander V Fedorov1, Lada V Yashina2, Oleg Yu Vilkov3

  • 1St. Petersburg State University, 7/9 Universitetskaya Nab., St Petersburg 199034, Russia. dmitry.usachov@spbu.ru and IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany.

Nanoscale
|November 30, 2018
PubMed

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