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Structure and Electron Mobility of ScN Films Grown on α-Al₂O₃(1 1 ¯ 02) Substrates
Takeshi Ohgaki1, Isao Sakaguchi2, Naoki Ohashi3
1Electroceramics Group, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan. OGAKI.Takeshi@nims.go.jp.
Abstract:
Scandium nitride (ScN) films were grown on α-Al₂O₃( 1 1 ¯ 02 ) substrates using the molecular beam epitaxy method, and the heteroepitaxial growth of ScN on α-Al₂O₃( 1 1 ¯ 02 ) and their electric properties were studied. Epitaxial ScN films with an orientation relationship (100)ScN || ( 1 1 ¯ 02 )α-Al₂O₃ and [001]ScN || [ 11 2 ¯ 0 ]α-Al₂O₃ were grown on α-Al₂O₃( 1 1 ¯ 02 ) substrates. Their crystalline orientation anisotropy was found to be small. In addition, [100] of the ScN films were tilted along [ 1 ¯ 101 ] of α-Al₂O₃( 1 1 ¯ 02 ) in the initial stage of growth. The tilt angle between the film growth direction and [100] of ScN was 1.4⁻2.0° and increased with growth temperature. The crystallinity of the ScN films also improved with the increasing growth temperature. The film with the highest Hall mobility was obtained at the boundary growth conditions determined by the relationship between the crystallinity and the nonstoichiometric composition because the film with the highest crystallinity was obtained under the Sc-rich growth condition. The decreased Hall mobility with a simultaneous improvement in film crystallinity was caused by the increased carrier scattering by the ionized donors originating from the nonstoichiometric composition.
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