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Updated: Feb 1, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Nonlinear plasmonic response of doped nanowires observed by infrared nanospectroscopy
Denny Lang1,2, Leila Balaghi1,3, Stephan Winnerl1
1Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany.
Abstract:
We report a strong shift of the plasma resonance in highly-doped GaAs/InGaAs core/shell nanowires (NWs) for intense infrared excitation observed by scattering-type scanning near-field infrared microscopy. The studied NWs show a sharp plasma resonance at a photon energy of about 125 meV in the case of continuous wave excitation by a CO2 laser. Probing the same NWs with the pulsed free-electron laser with peak electric field strengths up to several 10 kV cm-1 reveals a power-dependent redshift to about 95 meV and broadening of the plasmonic resonance. We assign this effect to a substantial heating of the electrons in the conduction band and subsequent increase of the effective mass in the nonparabolic Γ-valley.
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