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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Alireza Safaei1,2, Sayan Chandra2, Michael N Leuenberger1,2,3
1Department of Physics , University of Central Florida , Orlando , Florida 32816 , United States.
Researchers enhanced infrared light absorption using Dirac plasmons in patterned graphene. This method achieves high absorption in the 8-12 μm band, showing potential for optoelectronic devices.
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