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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Enabling thin-film transistor technologies and the device metrics that matter

Alexandra F Paterson1, Thomas D Anthopoulos2

  • 1King Abdullah University of Science and Technology (KAUST), Division of Physical Sciences and Engineering and KAUST Solar Centre, Thuwal, 23955-6900, Saudi Arabia. alexandra.paterson@kaust.edu.sa.

Nature Communications
|December 12, 2018
PubMed

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