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Related Concept Videos

Ferromagnetism01:31

Ferromagnetism

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Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
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Semiconductors01:22

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Magnetic Force On A Current-Carrying Conductor01:25

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Magnetic Force On Current-Carrying Wires: Example01:22

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Quantifying the Relative Thickness of Conductive Ferromagnetic Materials Using Detector Coil-Based Pulsed Eddy Current Sensors
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Current-driven magnetization switching in ferromagnetic bulk Rashba semiconductor (Ge,Mn)Te.

R Yoshimi1, K Yasuda2, A Tsukazaki3

  • 1RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.

Science Advances
|December 13, 2018
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Summary

Researchers demonstrated current-driven magnetization switching in (Ge,Mn)Te thin films. This discovery in polar ferromagnetic semiconductors utilizes the Rashba-Edelstein effect for electrical control of magnetism.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Multiferroic materials enable electrical control of magnetism via coupled ferroelectric and ferromagnetic orders.
  • Polar ferromagnetic semiconductors, with broken spatial inversion and time reversal symmetries, offer new avenues for multiferroics.
  • GeTe, a polar semiconductor with Rashba-type spin-split bands, serves as a base for exploring these phenomena.

Purpose of the Study:

  • To investigate current-driven magnetization switching in (Ge,Mn)Te thin films.
  • To explore the role of Mn doping in creating an exchange gap within the Dirac band structure.
  • To understand the underlying physical mechanisms, such as the Rashba-Edelstein effect, responsible for electrical manipulation of magnetization.

Main Methods:

  • Thin film deposition of (Ge,Mn)Te.
  • Characterization of magnetic and electronic properties, including anomalous Hall conductivity.
  • Pulse-current injection to induce and observe magnetization switching.

Main Results:

  • Ferromagnetism induced by Mn doping in GeTe creates an exchange gap in the massless Dirac bands.
  • Anomalous Hall conductivity increases with hole carrier density, peaking near the exchange gap.
  • Electrical switching of magnetization is achieved in up to 200 nm thick (Ge,Mn)Te films via pulse-current injection.
  • The observed effect is attributed to the bulk Rashba-Edelstein effect, with efficiency dependent on Fermi-level position.

Conclusions:

  • Current-driven magnetization switching is successfully demonstrated in the polar ferromagnetic semiconductor (Ge,Mn)Te.
  • The findings highlight the potential of magnetic bulk Rashba systems for functional correlations between electric polarization, magnetization, and current.
  • This work paves the way for novel spintronic devices based on electrical control of magnetism in semiconductors.