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Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface

Xuefei Li, Jingyi Wu, Yunsheng Ye

ACS Applied Materials & Interfaces

|December 13, 2018

Summary

A new hydrophobic polymer encapsulation protects few-layer black phosphorus (BP) from degradation. This method enhances electrical properties, improving on-off ratios and breakdown voltage for 2D electronic devices.

Keywords:

black phosphorus breakdown voltage encapsulation field-effect transistors high-field transport polymer reliability

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Few-layer black phosphorus (BP) is a 2D material with high carrier mobility and tunable band gap, ideal for electronics.
BP is highly susceptible to ambient degradation due to P-P bond oxidation, limiting device stability.
Effective encapsulation is crucial to preserve BP's electronic properties.

Purpose of the Study:

To develop and evaluate a novel hydrophobic polymer encapsulation technique for black phosphorus.
To compare the performance and stability of encapsulated BP transistors with traditional methods.
To investigate the impact of encapsulation on electrical characteristics, including on-off ratio and breakdown voltage.

Main Methods:

Fabrication of black phosphorus back-gate transistors.
Application of a hydrophobic polymer encapsulation layer with enhanced thermal conductivity.
Electrical characterization at room and cryogenic temperatures, including high field transport measurements.
Comparison with devices encapsulated using aluminum oxide (Al2O3).

Main Results:

The hydrophobic polymer encapsulation significantly improved the on-off ratio by over an order of magnitude at room temperature and over 4 orders at cryogenic temperatures.
Encapsulated BP transistors exhibited improved mobility and minimal trap states compared to Al2O3 encapsulation.
High field transport revealed unprecedented breakdown characteristics up to -5.5 V for 0.16 μm transistors, with high current density (1.2 mA/μm) at 20 K.

Conclusions:

Hydrophobic polymer encapsulation offers a viable strategy for enhancing the stability and performance of black phosphorus devices.
This technique addresses the critical challenge of BP degradation, paving the way for practical applications.
The improved breakdown voltage and on-off ratios demonstrate the potential of this method for high-performance 2D electronic and optoelectronic devices.