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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of

Gwomei Wu1,2, Anup K Sahoo3, Dave W Chen4

  • 1Institute of Electro-Optical Engineering, Chang Gung University, Taoyuan 333, Taiwan. wu@mail.cgu.edu.tw.

Materials (Basel, Switzerland)
|December 15, 2018
PubMed

Keywords:
a-IGZOe-beamgate dielectricreliabilitythin-film transistor

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