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Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET

Zhaonian Yang1, Yuan Yang2, Ningmei Yu3

  • 1Shaanxi Key Laboratory of Complex System Control and Intelligent Information Processing, Xi'an University of Technology, Xi'an 710048, China. yzn@xaut.edu.cn.

Micromachines
|December 15, 2018
PubMed

Keywords:
Silicon-Germanium source/drain (SiGe S/D)band-to-band tunneling (BTBT)electrostatic discharge (ESD)technology computer aided design (TCAD)tunnel field-effect transistor (TFET)

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