Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide.

Area of Science:

• Condensed Matter Physics
• Materials Science
• Nanotechnology

Background:

• Charge carrier transport in multilayer van der Waals (vdW) materials is influenced by Thomas-Fermi charge screening (λTF) and interlayer resistance (Rint).
• Distinctive charge transport behavior in 2D layered materials remains underexplored, despite numerous discovered vdW material properties.

Purpose of the Study:

• To demonstrate direct evidence of distinctive charge transport behavior in multilayer 2D layered materials.
• To investigate electron conduction features in multilayer rhenium disulfide (ReS2) and rationalize observed phenomena.

Main Methods:

• Utilized a theoretical resistor network model incorporating Thomas-Fermi charge screening (λTF) and interlayer resistance (Rint) coupling.
• Employed low-frequency noise spectroscopy to probe effective tunneling distance.

Main Results:

• Observed two distinct plateaus in the transconductance curve of ReS2, indicating conduction path relocation.
• Rationalized the observed relocation using a theoretical model accounting for λTF and Rint coupling.
• Low-frequency noise spectroscopy supported the shift of the electron conduction channel along the ReS2 thickness.

Conclusions:

• Multilayer ReS2 exhibits distinctive electron conduction features due to decoupled vdW interactions and high interlayer resistivity.
• The study provides direct evidence for charge carrier centroid migration in 2D layered materials, differing from bulk materials.