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Published on: March 19, 2017
Rational chemical doping of metal halide perovskites
Xinyuan Zhang1, Lina Li2, Zhihua Sun2
1State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China. jhluo@fjirsm.ac.cn lilina@fjirsm.ac.cn sunzhihua@fjirsm.ac.cn and University of Chinese Academy of Sciences, Beijing, 100049, China.
Abstract:
Metal halide perovskites benefit from the combination of wide absorption, high carrier mobility, defect tolerance, moderate exciton binding energies, and versatility of solution processes, showing great promise in photovoltaics and optoelectronics. However, the issues of long-term instability and toxicity of lead are supposed to limit their further practical applications. Chemical doping of an impurity into metal halide perovskites was reported to be a relatively effective approach to solving these issues while providing additional tunable physical and chemical properties. In an attempt to boost the research field further, it is imperative to summarize the recent significant work on metal halide doped perovskites, disclosing the underlying structure-property relationships to provide useful insights into applications of these perovskites with high performance. In this review, we highlight the rational design of doped perovskites by both theoretical and experimental efforts as well as their potential application spanning various fields.
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