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Updated: Jan 31, 2026

Dry Oxidation and Vacuum Annealing Treatments for Tuning the Wetting Properties of Carbon Nanotube Arrays
Published on: April 15, 2013
Enhanced luminescence from InGaN/GaN nano-disk in a wire array caused by surface potential modulation during wet
Pratim Kumar Saha1, Vikas Pendem1, Shonal Chouksey1
1Applied Quantum Mechanics Laboratory, Indian Institute of Technology Bombay, Powai, Mumbai, 400076, India.
None:
Here we have demonstrated the profound impact of surface potential on the luminescence of an array of InGaN/GaN nano-disk in a wire heterostructure. The change in surface potential is brought about by a combination of dry and successive wet-processing treatments. The photoluminescence (PL) properties are determined as a function of size and height of this array of nano-disks. The observed characteristics are coherently explained by considering a change in quantum confinement induced by the change in surface potential, quantum-confined Stark effect, exciton binding energy and strain relaxation for varying surface potential. The change in hole bound state energy due to parabolic potential well near the side-wall is found to be the dominating factor. The PL peak position, full width at half-maximum, strain relaxation and integrated PL intensity are studied as a function of incident power and temperature. The devices demonstrate higher integrated PL intensity and slope efficiency.
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