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Composition modulation by twinning in InAsSb nanowires.

M Schnedler1, T Xu2,3, V Portz1

  • 1Peter Grünberg Institut, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany.

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|December 20, 2018
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Summary
This summary is machine-generated.

We discovered composition-modulated axial heterostructures in zincblende (ZB) indium arsenide antimonide (InAsSb) nanowires. Pseudo-periodic twin boundaries cause reduced antimony (Sb) concentration, altering band alignment for novel electronic properties.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Indium arsenide antimonide (InAsSb) nanowires are promising for electronic devices.
  • Heterostructures in nanowires can create unique electronic properties.
  • Controlling composition and structure is key to tuning these properties.

Purpose of the Study:

  • To investigate the formation and impact of compositionally modulated axial heterostructures in zincblende (ZB) InAsSb nanowires.
  • To understand the role of pseudo-periodic twin boundaries in initiating these heterostructures.
  • To analyze the resulting changes in band alignment.

Main Methods:

  • Utilizing scanning tunneling microscopy (STM) to observe atomic-scale structure and composition.
  • Analyzing InAsSb nanowires with a zincblende (ZB) crystal structure.
  • Investigating the influence of twin boundaries on antimony (Sb) incorporation.

Main Results:

  • Observed composition-modulated axial heterostructures in ZB InAsSb nanowires.
  • Identified pseudo-periodic twin boundaries as the initiation sites.
  • Found reduced Sb concentration in specific planes at twin boundaries due to growth differences between 4H wurtzite and ZB polytypes.
  • Anticipated the creation of compositional band offsets alongside structural offsets.

Conclusions:

  • Pseudo-periodic twin boundaries in ZB InAsSb nanowires induce axial compositional modulation.
  • These modulations, arising from differential Sb incorporation during polytypic growth, create compositional band offsets.
  • The combined structural and compositional offsets are predicted to shift the band alignment from type II to type I, impacting electronic behavior.