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A Method for Quantifying Upper Limb Performance in Daily Life Using Accelerometers
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A High-Performance Digital Interface Circuit for a High-Q Micro-Electromechanical System Accelerometer.

Xiangyu Li1, Jianping Hu2, Xiaowei Liu3

  • 1Faculty of Information Science and Technology, Ningbo University, Ningbo 315211, China. lixiangyu@nbu.edu.cn.

Micromachines
|December 22, 2018
PubMed
Summary
This summary is machine-generated.

This study presents a high-performance digital interface circuit for micro-electromechanical system (MEMS) accelerometers, significantly reducing noise for inertial navigation and nanosatellite applications. The novel design achieves superior resolution and bias stability using advanced noise-cancellation techniques.

Keywords:
MEMSSigma-Deltahigh-Q capacitive accelerometerinterface circuit

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Area of Science:

  • * Electrical Engineering
  • * Sensor Technology
  • * Micro-electromechanical Systems (MEMS)

Background:

  • * Micro-electromechanical system (MEMS) accelerometers are crucial for inertial navigation and nanosatellites.
  • * Existing systems face challenges with mechanical and quantization noise, limiting performance.
  • * High-Q factor MEMS accelerometers require advanced interface circuitry for optimal signal acquisition.

Purpose of the Study:

  • * To develop a high-performance digital interface circuit for a high-Q MEMS micro-accelerometer.
  • * To significantly reduce mechanical and quantization noise in the accelerometer system.
  • * To achieve high resolution and bias stability for demanding applications.

Main Methods:

  • * Utilized a vacuum-packaged sensitive element to minimize mechanical noise.
  • * Implemented a 4th-order Sigma-Delta (ΣΔ) modulator with loop shaping for quantization noise suppression.
  • * Employed a low-noise front-end charge-amplifier with correlated double sampling (CDS) to eliminate 1/f noise and offset.

Main Results:

  • * Achieved a third harmonic distortion of -98 dB and a low-frequency noise floor below -140 dBV.
  • * Demonstrated a resolution of 0.48 μg/Hz1/2 (@300 Hz) and bias stability of 18 μg.
  • * The digital interface circuit was fabricated using 0.35 μm CMOS technology, occupying 3.3 mm × 3.5 mm and consuming 10 mW.

Conclusions:

  • * The developed digital interface circuit effectively enhances the performance of high-Q MEMS accelerometers.
  • * The system's low noise and high stability make it suitable for inertial navigation and nanosatellite applications.
  • * The integration of advanced techniques like ΣΔ modulation and CDS provides a robust solution for high-performance sensing.