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Waveguide-Integrated Black Phosphorus Photodetector for Mid-Infrared Applications
Li Huang1,2, Bowei Dong1,3, Xin Guo4
1Department of Electrical and Computer Engineering , National University of Singapore , 4 Engineering Drive 3 , Singapore 117583.
ACS Nano
|December 27, 2018
Summary
Researchers integrated silicon waveguides with black phosphorus photodetectors for mid-infrared sensing. This overcomes lattice mismatch issues, enabling on-chip sensing with high responsivity and low noise equivalent power.
Area of Science:
- Photonics and Materials Science
- On-chip sensing technologies
- Mid-infrared (MIR) applications
Background:
- Mid-infrared (MIR) sensing offers label-free and damage-free molecular fingerprint detection.
- Integration of MIR photodetectors with silicon photonics is challenging due to lattice mismatch.
- Existing waveguide-integrated on-chip sensing systems have limited success.
Purpose of the Study:
- To demonstrate the integration of silicon-on-insulator (SOI) waveguides with black phosphorus (BP) photodetectors for MIR sensing.
- To enhance light-BP interaction for improved absorption in thin BP layers.
- To investigate the performance of BP photodetectors in an integrated platform.
Main Methods:
- Fabrication of SOI waveguides integrated with BP photodetectors.
- Exploitation of optical confinement in Si waveguides and grating structures to enhance light-BP interaction.
- Characterization of spectral photoresponse, responsivity, noise equivalent power (NEP), power-dependent responsivity, and gate-tunable photocurrent.
Main Results:
- Achieved spectral photoresponse from 3.68 to 4.03 μm.
- Demonstrated high responsivity: 23 A/W at 3.68 μm and 2 A/W at 4 μm (at 1 V bias).
- Obtained a noise equivalent power (NEP) below 1 nW/Hz1/2 at room temperature.
Conclusions:
- Successful integration of passive Si photonics with active BP photodetectors.
- Overcame the absorption length limitation of thin BP films via optical confinement.
- Paved the way for realizing on-chip MIR sensing systems.
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