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Spin-dependent carrier mobility and its gate-voltage modifying effects for functionalized single walled black
1Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, People's Republic of China.
Nanotechnology
|December 29, 2018
Summary
Functionalized phosphorene nanotubes (PNTs) exhibit excellent magnetic semiconductor properties. Transition-metal doping significantly enhances carrier mobility, which is tunable with gate voltage for spintronic applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Phosphorene and its derivatives are highly researched for nanoscale electronic devices.
- Single-walled black phosphorus nanotubes (PNTs) offer unique structural and electronic properties.
Purpose of the Study:
- To theoretically investigate the functionalized features of armchair-edged PNTs.
- To explore the impact of low-concentration transition-metal (TM) doping on electronic structure and carrier mobility.
- To assess the potential of these doped PNTs as magnetic semiconductors for spintronic applications.
Main Methods:
- Theoretical investigation of armchair-edged single-walled black phosphorus nanotubes.
- Substitutional doping with transition-metal atoms (Ti, Mn, Fe, Ni) at low concentrations.
- Analysis of electronic structure, carrier mobility, and spin-dependent transport properties.
Main Results:
- Doped PNTs are predicted to be exceptional magnetic semiconductors (MSCs), exhibiting half-semiconductor or bipolar behavior.
- Spin-resolved carrier mobility at room temperature shows dependence on the doping element, carrier type, and spin polarity.
- Carrier mobility can differ by two orders of magnitude based on the TM dopant and is strongly tunable by gate voltage in a field-effect transistor configuration.
Conclusions:
- Transition-metal doped armchair PNTs are promising candidates for magnetic semiconductor applications.
- The gate voltage-dependent carrier mobility enhances carrier/spin separation, crucial for spintronic devices.
- This study highlights the potential for designing advanced functional materials for next-generation electronics.
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