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Lead Failure After Vagus Nerve Stimulation Implantation: Radiographic Examination and Revision Surgery
Hongyu Zhou1, Qiangqiang Liu1, Chenjie Zhao1
1Department of Functional Neurosurgery, Renji Hospital, School of Medicine, Shanghai Jiao Tong University, Shanghai, China.
Objective:
The present study assessed the most common types of lead failures, identified the causes, and discussed the potential procedures for revision surgery after vagus nerve stimulator implantation in patients with epilepsy.
Methods:
In a retrospective study during an 8-year period, 13 patients had undergone revision surgery because of lead failure. Lead failure was classified as either lead intrinsic damage or lead pin disengagement from the generator header. On the radiographic image, we defined a rear lead connector (RC) ratio that represented the portion of the rear lead connector in the header receptacle. It was used to quantitatively evaluate the mechanical failure of the lead-header interface. The optimal procedures to identify and manage lead failure were established.
Results:
All 13 patients presented with high lead impedance of ≥9 kOhms at the time of revision. Of 10 patients with lead damage, 7 had presented with an increased seizure frequency after a period of seizure remission. In contrast to lead damage occurring relatively late (>15 months), lead pin disengagement was usually found within the early months after device implantation. A significant association was found between an elevated RC ratio (≥35%) and lead pin disengagement. The microsurgical technique permitted removal or replacement of the lead without adverse effects.
Conclusions:
The method of measuring the RC ratio developed in the present study is feasible for identifying lead disengagement at the generator level. Lead revision was an effective and safe procedure for patients experiencing lead failure.
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