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Updated: Jan 31, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Recent Progress of Janus 2D Transition Metal Chalcogenides: From Theory to Experiments
Ruiping Li1, Yingchun Cheng1, Wei Huang1,2
1Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China.
Abstract:
Since the discovery of graphene, 2D materials with various properties have gained increasing attention in fields such as novel electronic, optic, spintronic, and valleytronic devices. As an important derivative of 2D materials, Janus 2D materials, such as Janus transition metal chalcogenides (TMDs), have become a research hot spot in recent years. Janus 2D materials with mirror asymmetry display novel properties, such as the Rashba effect and normal piezoelectric polarization, providing great promise for their application in sensors, actuators, and other electromechanical devices. Here, the current theoretical and experimental progresses made in the development of Janus 2D TMDs, including their structure and stability, electronic properties, fabrication, and the results of their characterization are reported. Finally, the future prospects for the further development of Janus 2D materials are considered.
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