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Related Concept Videos

Properties of Transition Metals02:58

Properties of Transition Metals

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Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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In hot, dry climates, the thermal mass of masonry walls can be beneficial, absorbing heat during the day and releasing it at night, thereby stabilizing indoor temperatures. However, in most other climates, additional insulation is necessary to enhance thermal resistance.
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Metallic bonds are formed between two metal atoms. A simplified model to describe metallic bonding has been developed by Paul Drüde called the “Electron Sea Model”. 
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Updated: Jan 31, 2026

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays
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Gate-Tunable Thermal Metal-Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor.

Mahito Yamamoto1, Ryo Nouchi2,3, Teruo Kanki1

  • 1Institute of Scientific and Industrial Research , Osaka University , Ibaraki , Osaka 567-0047 , Japan.

ACS Applied Materials & Interfaces
|January 4, 2019
PubMed
Summary

Vanadium dioxide (VO2) switching devices are enhanced by integrating 2D tungsten diselenide (WSe2) semiconductors. This van der Waals stacking enables gate-tunable control of the metal-insulator transition for advanced electronic applications.

Keywords:
2D materialsfield-effect transistormetal−insulator transitionphase-change materialstungsten diselenidevan der Waals heterostructuresvanadium dioxide

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Vanadium dioxide (VO2) exhibits a significant metal-insulator transition (MIT) near room temperature, crucial for switching and sensing devices.
  • Controlling the VO2 MIT via electric field-effect gating remains a key challenge for practical applications.

Purpose of the Study:

  • To demonstrate a gate-tunable switching device utilizing VO2.
  • To explore the integration of VO2 with 2D semiconductors for enhanced device functionality.

Main Methods:

  • Fabrication of a field-effect transistor using a VO2 microwire as the drain contact and a 2D tungsten diselenide (WSe2) semiconductor channel.
  • Utilizing hexagonal boron nitride as a gate dielectric for van der Waals heterostructure assembly.
  • Characterization of the WSe2 transistor's electrical transport properties under varying gate voltages and temperatures.

Main Results:

  • The fabricated WSe2 transistor exhibited ambipolar transport characteristics.
  • An abrupt, discontinuous current jump was observed near the critical temperature of VO2's MIT, indicating gate-induced thermal switching.
  • Gate-mediated self-heating was identified as the mechanism triggering the MIT in the VO2 microwire.

Conclusions:

  • Successful demonstration of gate-tunable switching in a VO2-based device through van der Waals integration with WSe2.
  • This approach offers a promising pathway for developing advanced VO2-based electronic and photonic devices.
  • Highlights the potential of 2D semiconductor heterostructures for precise control of phase transitions in functional materials.