Field Effect Transistor
Oxidation Numbers
Bipolar Junction Transistor
Pyruvate Oxidation
Strong Acid and Base Solutions
Chemical Reactions in Aqueous Solutions
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Jan 31, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Junhee Lee1, Jinwon Lee1, Jintaek Park1
1Program in Nano Science and Technology, Graduate School of Convergence Science and Technology , Seoul National University , 1 Gwanak-ro , Gwanak-gu, Seoul 08826 , Republic of Korea.
A novel homojunction structure significantly improves low-temperature, solution-processed metal oxide thin-film transistors. This breakthrough enhances field-effect mobility and carrier concentration control for flexible electronics.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: