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Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga₂O₃/Ag/Ga₂O₃ Transparent Conductive Electrode

Hong Wang1,2,3, Quanbin Zhou4, Siwei Liang5,6

  • 1Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China. phhwang@scut.edu.cn.

Nanomaterials (Basel, Switzerland)
|January 10, 2019
PubMed

Keywords:
AlGaN-based ultraviolet light-emitting diodeGa2O3sheet resistancetransmittancetransparent conductive electrode

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