Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

Quantum Numbers

Quantum Numbers

It is said that the energy of an electron in an atom is quantized; that is, it can be equal only to certain specific values and can jump from one energy level to another but not transition smoothly or stay between these levels.

The Quantum-Mechanical Model of an Atom

The Quantum-Mechanical Model of an Atom

Shortly after de Broglie published his ideas that the electron in a hydrogen atom could be better thought of as being a circular standing wave instead of a particle moving in quantized circular orbits, Erwin Schrödinger extended de Broglie’s work by deriving what is now known as the Schrödinger equation. When Schrödinger applied his equation to hydrogen-like atoms, he was able to reproduce Bohr’s expression for the energy and, thus, the Rydberg formula governing hydrogen spectra.

Bipolar Junction Transistor

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...

Electric Field

Electric Field

Consider two point charges, each exerting Coulomb force on the other. It is possible to describe the Coulomb interaction via an intermediate step by defining a new physical quantity called the electric field.
In the new picture, imagine that the first charge sets up an electric field independent of all other charges in the universe. When another charge comes in its vicinity, the second charge experiences an electric force depending on the electric field at that point. The source charge does not...

Magnetic Fields

Magnetic Fields

A moving charge or a current creates a magnetic field in the surrounding space, in addition to its electric field. The magnetic field exerts a force on any other moving charge or current that is present in the field. Like an electric field, the magnetic field is also a vector field. At any position, the direction of the magnetic field is defined as the direction in which the north pole of a compass needle points.
A magnetic field is defined by the force that a charged particle experiences...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Diffusion-Controlled Drug Release from Electrospun Poly(3-hydroxybutyrate) Fibers with Beaded Architecture: An Experimental and Modeling Study.

International journal of molecular sciences·2026

Same author

Impact of the local valley splitting on the coherence of conveyor-belt spin shuttling in <sup>28</sup>Si/SiGe.

Nature communications·2026

Same author

Highly Tunable Two-Qubit Interactions in Si/SiGe Quantum Dots by Interchanging the Roles of Qubit-Defining Gates.

Nano letters·2026

Same author

Hybrid Mie Resonator Photocatalysts as a Platform for Solar Chemicals: Quantification of Light-Induced Electronic Effect versus Heating Effect.

ACS applied materials & interfaces·2026

Same author

Two-qubit logic and teleportation with mobile spin qubits in silicon.

Nature·2026

Same author

Buried Unstrained Germanium Channels: A Lattice-Matched Platform for Quantum Technology.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026

Search research articles

Related Experiment Video

Updated: Jan 30, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers.

Florian Vigneau¹, Raisei Mizokuchi¹, Dante Colao Zanuz¹

¹Université Grenoble Alpes, CEA, INAC-Pheliqs , 38000 Grenoble , France.

|January 12, 2019

Summary

This summary is machine-generated.

Researchers created novel hybrid superconductor-semiconductor devices using germanium channels and aluminum leads. These Josephson field-effect transistors demonstrate gate-controlled supercurrents, advancing quantum computing applications.

Keywords:

Ge quantum well Josephson field-effect transistor proximity-effect-induced superconductivity superconducting quantum interference device two-dimensional hole gas

More Related Videos

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Implementation of a Reference Interferometer for Nanodetection

Implementation of a Reference Interferometer for Nanodetection

Published on: April 26, 2014

Related Experiment Videos

Last Updated: Jan 30, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Implementation of a Reference Interferometer for Nanodetection

Implementation of a Reference Interferometer for Nanodetection

Published on: April 26, 2014

Area of Science:

Condensed Matter Physics
Quantum Computing

Background:

Hybrid superconductor-semiconductor structures are crucial for quantum computing.
Topological superconducting systems and tunable superconducting qubits are key applications.

Purpose of the Study:

To realize prototypical hybrid devices using SiGe/Ge/SiGe heterostructures and aluminum leads.
To investigate gate-controlled supercurrent transport in germanium channels.

Main Methods:

Fabrication of hybrid devices including Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs).
Utilizing SiGe/Ge/SiGe quantum-well heterostructures with two-dimensional holes.
Employing tunnel spectroscopy to estimate the induced superconducting gap.
Transmission electron microscopy for interface analysis.

Main Results:

Observed gate-controlled supercurrent transport in germanium channels up to one micrometer.
Estimated the induced superconducting gap.
Transmission electron microscopy confirmed germanium diffusion into aluminum contacts, with no aluminum detected in the germanium channel.

Conclusions:

Demonstrated the feasibility of hybrid superconductor-semiconductor devices for quantum applications.
Highlighted the potential of germanium channels for realizing advanced quantum devices.
Interface properties are critical for device performance.