Al₂O₃-Based a-IGZO Schottky Diodes for Temperature Sensing

Area of Science:

• Materials Science
• Electrical Engineering
• Sensor Technology

Background:

• High-temperature electronic devices are crucial for operation in harsh environments.
• Demand for robust sensors capable of withstanding extreme temperatures is increasing.

Purpose of the Study:

• To propose and characterize an Al₂O₃-based amorphous indium-gallium-zinc-oxide (a-IGZO) Schottky diode sensor.
• To investigate the performance of this sensor across a wide temperature range (21–400 °C).
• To analyze factors influencing diode performance and their relationship with temperature.

Main Methods:

• Design and fabrication of Al₂O₃-based a-IGZO Schottky diodes.
• Testing of diode performance at temperatures ranging from 21 °C to 400 °C.
• Analysis of the relationship between diode ideality factor (n), barrier height (ΦB), and temperature.

Main Results:

• The study details the design, fabrication, and testing methodologies for the Schottky diodes.
• Performance metrics were evaluated, including the ideality factor and barrier height as functions of temperature.
• The sensitivity of the diode sensors was quantified at different forward current densities, reaching up to 1.59 mV/°C.

Conclusions:

• The developed Al₂O₃-based a-IGZO Schottky diode sensor shows promise for high-temperature applications.
• Understanding the temperature-dependent characteristics is key to optimizing sensor performance.
• The sensor exhibits measurable sensitivity suitable for high-temperature sensing.