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20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

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GeSn heterostructure micro-disk laser operating at 230 K.

Quang Minh Thai, Nicolas Pauc, Joris Aubin

|January 16, 2019

Summary

This summary is machine-generated.

Germanium-tin (GeSn) heterostructure micro-disk lasers demonstrate lasing up to 230 K. Enhanced optical and carrier confinement in the GeSn active layer significantly boosts maximum operating temperature.

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Area of Science:

Semiconductor physics
Optoelectronics
Materials science

Background:

Germanium-tin (GeSn) alloys are promising for optoelectronic applications due to their tunable bandgap.
Achieving high-temperature operation in GeSn-based lasers remains a significant challenge.
Micro-disk cavities offer strong optical confinement for efficient lasing.

Purpose of the Study:

To demonstrate high-temperature lasing in a GeSn heterostructure micro-disk cavity.
To investigate the impact of material growth and heterostructure design on laser performance.
To identify factors enabling elevated operating temperatures.

Main Methods:

Growth of a GeSn 16.0% optically active layer on a step-graded GeSn buffer.
Fabrication of a micro-disk cavity structure.
Characterization of lasing performance at various temperatures (15 K to 230 K).

Main Results:

Lasing was successfully demonstrated up to 230 K in the GeSn heterostructure micro-disk cavity.
Lasing wavelengths shifted from 2720-2890 nm at 15 K to 3200 nm at 230 K.
The GeSn buffer layer effectively limited misfit dislocation density.

Conclusions:

The enhanced maximum lasing temperature is attributed to a thicker active layer providing stronger optical confinement.
Improved carrier confinement from the GeSn 13.8% / GeSn 16.0% / GeSn 13.8% double heterostructure is crucial.
This work advances GeSn-based lasers towards practical, higher-temperature applications.