Related Experiment Video
Updated: Jan 30, 2026

14:58
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
15.4K
Lasing threshold of thresholdless and non-thresholdless metal-semiconductor nanolasers
Optics Express
|January 16, 2019
Summary
We identified the lasing threshold in metal-semiconductor nanolasers by analyzing coherence properties. This allows for a simple calculation of threshold pump power for various nanolaser types.
Area of Science:
- Optics and Photonics
- Materials Science
- Nanotechnology
Background:
- Metal-semiconductor nanolasers offer unique properties like ultra-small mode volume and fast modulation.
- Identifying the precise lasing threshold and coherence onset in these devices remains challenging.
Purpose of the Study:
- To systematically investigate the second-order coherence properties of metal-semiconductor nanolasers.
- To establish a clear definition for the lasing threshold based on coherence.
- To derive a universal expression for threshold pump power.
Main Methods:
- Analysis of second-order coherence properties at varying pump rates.
- Systematic study of metal-semiconductor nanolasers.
Main Results:
- A clear definition of the lasing threshold was established using coherence measurements.
- A simple, applicable expression for threshold pump current (or optical pump power) was derived.
- The method is applicable to both thresholdless and non-thresholdless nanolasers.
Conclusions:
- Coherence properties provide a reliable method for determining the lasing threshold in nanolasers.
- The derived expression simplifies threshold determination across different nanolaser designs.
- This work facilitates the practical application and understanding of metal-semiconductor nanolasers.
Related Concept Videos
Metal-Semiconductor Junctions
981
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
981
Biasing of Metal-Semiconductor Junctions
583
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
583
Semiconductors
1.5K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.5K
Types of Semiconductors
1.4K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.4K
Bonding in Metals
52.4K
Metallic bonds are formed between two metal atoms. A simplified model to describe metallic bonding has been developed by Paul Drüde called the “Electron Sea Model”.
52.4K
Metallic Solids
20.6K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
20.6K

