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Updated: Jan 30, 2026

Electric and Magnetic Field Devices for Stimulation of Biological Tissues
Published on: May 15, 2021
Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via
Aitian Chen1,2,3, Yan Wen3, Bin Fang4
1Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing, 100084, China.
Abstract:
Electrically switchable magnetization is considered a milestone in the development of ultralow power spintronic devices, and it has been a long sought-after goal for electric-field control of magnetoresistance in magnetic tunnel junctions with ultralow power consumption. Here, through integrating spintronics and multiferroics, we investigate MgO-based magnetic tunnel junctions on ferroelectric substrate with a high tunnel magnetoresistance ratio of 235%. A giant, reversible and nonvolatile electric-field manipulation of magnetoresistance to about 55% is realized at room temperature without the assistance of a magnetic field. Through strain-mediated magnetoelectric coupling, the electric field modifies the magnetic anisotropy of the free layer leading to its magnetization rotation so that the relative magnetization configuration of the magnetic tunnel junction can be efficiently modulated. Our findings offer significant fundamental insight into information storage using electric writing and magnetic reading and represent a crucial step towards low-power spintronic devices.
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