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Updated: Jan 30, 2026

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Vertical gate-all-around (VGAA) core-shell Tunneling Field-Effect Transistors (TFETs) were experimentally demonstrated for the first time. These devices show excellent performance for future low-power electronics like mobile and IoT applications.

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Device Engineering

Background:

  • Tunneling Field-Effect Transistors (TFETs) are crucial for low-power CMOS applications, including mobile and Internet of Things (IoT) devices.
  • Vertical Gate-All-Around (VGAA) core-shell (C-S) architectures offer a promising solution to meet stringent CMOS footprint requirements and enhance performance.
  • Achieving high current drive and subthreshold swing below the Boltzmann limit is essential for next-generation electronics.

Purpose of the Study:

  • To experimentally demonstrate VGAA nanowire GaSb/InAs C-S TFETs for the first time.
  • To characterize key device properties such as subthreshold swing and current drive.
  • To investigate the impact of scaling dimensions and interface trap density on device performance.

Main Methods:

  • Fabrication of VGAA nanowire GaSb/InAs C-S TFETs.
  • Experimental characterization of device performance, including subthreshold swing and current drive.
  • Technology Computer-Aided Design (TCAD) modeling to analyze device physics and requirements.

Main Results:

  • Successful experimental demonstration of VGAA nanowire GaSb/InAs C-S TFETs.
  • Achieved subthreshold swing of 40 mV/dec at Vd = 10 mV.
  • Demonstrated current drive up to 40 μA/wire at Vd = 0.3 V for a 50 nm diameter wire.
  • Identified interface trap density requirements for meeting industry-standard off-current specifications.

Conclusions:

  • VGAA nanowire GaSb/InAs C-S TFETs represent a significant advancement for low-power electronics.
  • The demonstrated device performance metrics are highly encouraging for mobile and IoT applications.
  • Further optimization of interface trap density is critical for achieving commercial viability.