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Related Concept Videos

Semiconductors01:22

Semiconductors

1.5K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
583
ATP Driven Pumps I: An Overview01:27

ATP Driven Pumps I: An Overview

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ATP-driven pumps, also known as transport ATPases, are integral membrane proteins. They have binding sites for ATP located on the membrane's cytosolic side and the ion-conducting domain in the transmembrane region. These pumps use the free energy released from ATP hydrolysis to move the solutes across cell membranes against an electrochemical gradient.
There are four main types of ATP-driven pumps - P-type, V-type, F-type, and ABC transporter. All these pumps are of varying complexities and...
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Finding Electric Potential From Electric Field01:13

Finding Electric Potential From Electric Field

5.6K
For a system of charges, it is easy to calculate the system's potential because potential is a scalar quantity. However, in some instances where calculating the electric field is more straightforward than finding the potential, the electric field is used to calculate the system's potential. For a positive charge, the electric field is radially outward, and the potential is positive at any finite distance from the positive charge. In such an electric field, the motion away from the...
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Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling
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Toward electrically driven semiconductor nanowire lasers.

Yunyan Zhang1, Dhruv Saxena2, Martin Aagesen3

  • 1Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom.

Nanotechnology
|January 19, 2019
PubMed
Summary
This summary is machine-generated.

Semiconductor nanowire (NW) lasers offer compact, efficient coherent light. This review details progress in optically and electrically pumped NW lasers, focusing on single-mode operation and threshold reduction for practical applications.

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Area of Science:

  • Optoelectronics
  • Nanotechnology
  • Materials Science

Background:

  • Semiconductor nanowire (NW) lasers are emerging as key components for next-generation coherent light sources.
  • Their small size, high efficiency, and integration potential drive rapid research advancements.
  • Optically pumped lasing has been widely demonstrated in various NW materials.

Purpose of the Study:

  • To review the state-of-the-art in semiconductor nanowire lasers.
  • To categorize NW lasers by lasing wavelength and tunability.
  • To summarize advancements towards electrically pumped NW lasers.

Main Methods:

  • Categorization of NW lasers based on spectral properties.
  • Summary of techniques for achieving single-mode lasing.
  • Review of methods for reducing lasing thresholds.
  • Analysis of progress in electrical pumping of NW lasers.

Main Results:

  • Extensive reports on optically pumped lasing in diverse semiconductor NWs.
  • Development of strategies for single-mode lasing in NWs.
  • Demonstrated reduction in lasing thresholds.
  • Progress towards electrically pumped NW laser devices.

Conclusions:

  • Semiconductor NW lasers show significant promise for practical applications.
  • Electrical pumping is crucial for widespread implementation.
  • Future research will focus on further improvements and emerging trends in NW laser technology.