Video Monitoring Application of CMOS 4T-PPD-APS Under γ-ray Radiation

In this paper, we discuss the potential use of four transistor active pixel sensor (4T-APS) as a video monitor at a nuclear accident site with a high level of γ radiation. The resistance and radiation responses to γ radiation were investigated by radiation experiments using ¹³⁷Cs and ⁶⁰Co γ-ray sources. The radiation resistance of 4T-APS was studied by testing the mean and the maximum dark current of the sensors after irradiation. A random spatial distribution of radiation response events was observed upon analyzing these events on the video images in a given time during irradiation. The background dependence of the 4T-APS was also studied by comparing the grayscale incremental value of the images with different color and grayscale backgrounds: the radiation response events were obvious on the images with a background having a smaller grayscale value or a deeper color. Finally, the color saturation and resolution of the images were tested using a vector oscilloscope and a test card. When the total ionizing dose was less than or equal to the damage threshold, no significant performance deterioration of 4T-APS was observed in an environment with sufficient light.