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Updated: Jan 30, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Intrinsic Electric Field-Induced Properties in Janus MoSSe van der Waals Structures
Fengping Li1, Wei Wei1, Hao Wang1
1School of Physics, State Key Laboratory of Crystal Materials , Shandong University , Jinan 250100 , China.
Abstract:
Focusing on two-dimensional (2D) Janus MoSSe monolayers, we show that simultaneously existing in-plane and out-of-plane intrinsic electric fields cause Zeeman- and Rashba-type spin splitting, respectively. In MoSSe van der Waals (vdW) structures, intrinsic electric field results in a large interlayer band offset. Therefore, large interlayer band offset, being the driving force for interlayer excitons, endows ultralong lifetimes to excitons and might dissociate excitons into free carriers. In comparison to its parent structure (i.e., MoS2), MoSSe vdW structures are rather appealing for new concepts in light-electricity interconversion. In addition, the Rashba effects could be tuned by changing the interlayer distances due to the competition between the intralayer and interlayer electric field. Due to the large band offset, valley polarization relaxation is markedly reduced, promising enhanced valley polarization and ultralong valley lifetimes. As a result, MoSSe vdW structures harbor strong valley-contrasting physics, making them competitive systems to their parent structures.
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