Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

1.2K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.2K
Electron Carriers01:24

Electron Carriers

91.8K
Electron carriers can be thought of as electron shuttles. These compounds can easily accept electrons (i.e., be reduced) or lose them (i.e., be oxidized). They play an essential role in energy production because cellular respiration is contingent on the flow of electrons.
Over the many stages of cellular respiration, glucose breaks down into carbon dioxide and water. Electron carriers pick up electrons lost by glucose in these reactions, temporarily storing and releasing them into the electron...
91.8K
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

1.5K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.5K
Carrier Transport01:21

Carrier Transport

949
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
949
The ADP/ATP Carrier Protein01:42

The ADP/ATP Carrier Protein

4.3K
ADP/ATP carrier or AAC protein is the most abundant carrier protein in the inner mitochondrial membrane. It transports large quantities of ADP and ATP, equivalent to the average human body weight, every day. Among other transporters, ACC protein is one of the best-studied members of the mitochondrial carrier protein family. The ADP/ATP carrier protein comprises two transmembrane helices connected to a loop and a single alpha-helix on the matrix side. It switches between two conformational...
4.3K
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

1.3K
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.3K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Evaluating the safety profile of poliomyelitis vaccines: insights from post-marketing surveillance.

Virology journal·2026
Same author

Perfect Carbon Balance in Electrooxidation of 5-Hydroxymethylfurfural to Formic Acid Over Fe-MoS<sub>2</sub>.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Metal-Induced Oxygen Diffusion-Aware Design of a-IGZO TFTs for Boosting Performance.

ACS applied materials & interfaces·2026
Same author

GFPT2 upregulation predicts poor prognosis and is associated with TGF-β/Smad activation in lung adenocarcinoma.

Discover oncology·2026
Same author

Gate-tunable giant negative magnetoresistance in tellurene driven by quantum geometry.

Nature communications·2026
Same author

<i>In Situ</i> Study of the Ferroelectric-Antiferroelectric Phase Transition in Hf<sub>1-<i>x</i></sub>Zr<sub><i>x</i></sub>O<sub>2</sub> at Elevated Temperatures up to 600 °C.

Nano letters·2026

Related Experiment Video

Updated: Jan 30, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
11:25

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

11.6K

Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors.

Samuel Berweger1,2, Gang Qiu3,4, Yixiu Wang5

  • 1Applied Physics Division , National Institute of Standards and Technology , Boulder , Colorado 80305 , United States.

Nano Letters
|January 24, 2019
PubMed
Summary

Near-field scanning microwave microscopy (SMM) images local carrier type and conductivity in van der Waals (vdW) devices. This reveals non-uniform charge distribution, crucial for developing advanced electronic components.

Keywords:
2D materialsAtomic force microscopefield-effect transistormicrowavenear-field microscopy

More Related Videos

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.4K
In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays
10:05

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

Published on: September 20, 2021

2.9K

Related Experiment Videos

Last Updated: Jan 30, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
11:25

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

11.6K
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.4K
In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays
10:05

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

Published on: September 20, 2021

2.9K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Van der Waals (vdW) homojunction devices require materials with narrow bandgaps and high carrier mobilities for bipolar transport.
  • Imaging and studying spatial variations in carrier type and conductivity at the nanoscale is essential for device development.

Purpose of the Study:

  • To demonstrate the capability of near-field scanning microwave microscopy (SMM) for in operando imaging of local carrier type and conductivity.
  • To investigate spatial electronic variations in two-dimensional (2D) tellurium field-effect transistors (FETs).

Main Methods:

  • Utilized near-field scanning microwave microscopy (SMM) to probe local electronic properties.
  • Fabricated and characterized ambipolar field-effect transistors (FETs) using 2D tellurium.
  • Generated nanometer-resolved maps of the local carrier equivalence backgate voltage.

Main Results:

  • SMM successfully imaged local carrier type and conductivity in 2D tellurium FETs.
  • Nanometer-resolved maps revealed non-uniform carrier distribution across the device.
  • The global conductivity minimum resulted from coexisting p-type and n-type regions, not uniform neutrality.

Conclusions:

  • Near-field scanning microwave microscopy (SMM) is a powerful tool for analyzing nanoscale electronic variations in vdW devices.
  • Understanding spatial carrier distribution is critical for optimizing the performance of emerging electronic materials and devices.
  • This technique addresses the need for high-resolution imaging of electronic properties in nanoscale devices.