Related Experiment Video
Updated: Jan 30, 2026

A Wind Tunnel for Odor Mediated Insect Behavioural Assays
Published on: November 30, 2018
High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling
Garam Kim1, Jaehong Lee2, Jang Hyun Kim3
1Department of Electrical and Computer Engineering (ECE), Seoul National University, Gwanak 599, Gwanak-gu, Seoul 151-742, Korea. kgr2487@gmail.com.
Abstract:
The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics. In order to address these challenges, Ge-channel heterostructure TFET with Si source and drain region is proposed, and its electrical characteristics are compared to other TFET structures. From two-dimensional (2-D) device simulation results, it is confirmed that the Si/Ge heterostructure source junction improves Ion and SS characteristics by using the direct band-to-band tunneling current. Furthermore, the proposed structure shows suppressed ambipolar behavior since the Ge/Si heterostructure is used at the drain junction.
Related Concept Videos
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
Field Effect Transistor
Magnetic Field Of A Current Loop
Force On A Current Loop In A Magnetic Field
Torque On A Current Loop In A Magnetic Field
Consider a rectangular current-carrying loop containing N turns of wire, placed in a uniform magnetic field. The net force on a current-carrying loop...

