Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

Area of Science:

• Semiconductor Physics
• Materials Science

Background:

• Accurate modeling of nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is crucial for advanced electronics.
• Existing ballistic transport models often lack the precision to capture real-world device behavior.

Purpose of the Study:

• To develop an enhanced transport model for nanoscale MOSFETs.
• To accurately characterize current-voltage (I-V) behavior by incorporating key physical parameters.

Main Methods:

• Extended Natori's ballistic transport model by introducing two fitting parameters: transmission probability and drain-channel coupling.
• Fabricated n-channel MOSFETs with varying channel lengths for experimental validation.
• Analyzed the length dependence of the model parameters.

Main Results:

• The enhanced model accurately characterizes the I-V behavior of nanoscale MOSFETs.
• The drain-channel coupling parameter leads to a significantly larger theoretical ON-resistance (R_ON) compared to previous models.
• Parameter dependence on channel length supports a quasi-ballistic transport description.

Conclusions:

• The proposed two-parameter model provides a more accurate and physically grounded approach to simulating nanoscale MOSFETs.
• The model's ability to predict a larger R_ON offers critical insights for device design and optimization.
• Experimental validation confirms the quasi-ballistic nature of charge transport in these devices.