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A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer
Youlei Sun1, Ying Wang2, Jianxiang Tang3
1The Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China. 161040013@hdu.edu.cn.
Micromachines
|January 30, 2019
Summary
A novel AlGaN/GaN Schottky barrier diode (SBD) with a T-anode and field plates significantly boosts breakdown voltage. This design enhances performance without degrading forward characteristics, offering a six-fold improvement in breakdown voltage.
Area of Science:
- Materials Science
- Electrical Engineering
- Semiconductor Devices
Background:
- AlGaN/GaN Schottky barrier diodes (SBDs) are crucial for high-power electronics.
- Improving breakdown voltage (VBK) while maintaining forward characteristics is a key challenge.
Purpose of the Study:
- To propose and analyze a novel AlGaN/GaN SBD structure with a deep T-anode and field plates (TAI-BBF FP SBD).
- To compare its electrical performance against conventional gated edge termination SBDs (GET SBDs).
Main Methods:
- Technology Computer Aided Design (TCAD) simulations were employed for electrical characteristic analysis.
- Comparison of breakdown voltage, turn-on voltage, and specific on-resistance between the proposed and conventional SBDs.
Main Results:
- The TAI-BBF FP SBD demonstrated a VBK of 1252 V, a nearly six-fold increase compared to the GET SBD's 213 V.
- The T-anode suppressed tunneling current, and field plates redistributed the electric field, enhancing VBK.
- Optimized device showed a low turn-on voltage (VT) of 0.53 V and specific on-resistance (RON,sp) of 0.32 mΩ·cm², comparable to GET SBDs.
Conclusions:
- The proposed TAI-BBF FP SBD structure offers a significant improvement in breakdown voltage.
- This design achieves superior high-voltage performance without compromising forward electrical characteristics.
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