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Structural Controlling of Highly-Oriented Polycrystal 3C-SiC Bulks via Halide CVD
Zhiying Hu1, Dingheng Zheng2, Rong Tu3
1State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China. huzhiying312@foxmail.com.
Highly-oriented 3C-SiC bulks were rapidly fabricated using halide chemical vapor deposition (CVD). Deposition temperature and pressure control grain orientation and unique surface morphologies, impacting aluminum wetting.
Area of Science:
- Materials Science
- Chemical Engineering
- Crystallography
Background:
- Highly-oriented polycrystalline 3C-SiC (Silicon Carbide) is crucial for advanced applications.
- Controlling grain orientation and surface morphology is key to tailoring material properties.
- Understanding deposition mechanisms is essential for optimizing fabrication processes.
Purpose of the Study:
- To investigate the ultra-fast fabrication of highly-oriented 3C-SiC bulks using halide chemical vapor deposition (CVD).
- To determine the influence of deposition temperature (Tdep) and total pressure (Ptot) on 3C-SiC grain orientation and surface morphology.
- To examine the wetting behavior of fabricated CVD-SiC by molten aluminum.
Main Methods:
- Fabrication of 3C-SiC bulks via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl₄) and methane (CH₄).
- Systematic variation of deposition temperature (Tdep) and total pressure (Ptot).
- Analysis of grain orientation using crystallographic methods.
- Characterization of surface morphology using microscopy.
- Wetting behavior examination of CVD-SiC by molten aluminum at 1173 K in a high vacuum.
Main Results:
- Growth orientation of 3C-SiC columnar grains was strongly dependent on Tdep, transitioning from <111>- to <110>-orientation with increasing temperature.
- The arrangement of <111>-oriented columnar grains was effectively controlled by Ptot.
- Unique surface morphologies, including lotus-, turtle-, thorn-, and strawberry-like structures, were observed, correlating with grain arrangements.
- Wetting behavior of CVD-SiC by molten aluminum was successfully examined.
Conclusions:
- Ultra-fast fabrication of highly-oriented 3C-SiC bulks is achievable via halide CVD.
- Deposition temperature and pressure are critical parameters for controlling 3C-SiC crystal growth orientation and surface morphology.
- The observed surface morphologies are a direct consequence of the arrangement of oriented grains, providing insights into the deposition mechanism.
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