InGaAs/InP multi-quantum-well nanowires with a lower optical leakage loss on v-groove-patterned SOI substrates

Area of Science:

• Semiconductor Nanowire Growth
• Photonic Integration
• Materials Science

Background:

• Silicon-on-insulator (SOI) substrates are crucial for microelectronics.
• III-V compound semiconductors offer superior optoelectronic properties compared to silicon.
• Monolithic integration of III-V materials on silicon is a key challenge for advanced photonics.

Purpose of the Study:

• To develop a method for directly growing InGaAs/InP multi-quantum-well (MQW) nanowires on patterned SOI substrates.
• To reduce optical leakage loss in III-V nanowires integrated on silicon.
• To enable monolithic photonic integration of III-V semiconductors on silicon.

Main Methods:

• Direct growth of InGaAs/InP MQW nanowires on v-groove-patterned SOI using metal organic chemical vapor deposition (MOCVD).
• Characterization using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and micro-photoluminescence (μ-PL).
• Numerical simulations to analyze optical guided modes and leakage loss.

Main Results:

• Achieved direct growth of InGaAs/InP MQW nanowires on SOI.
• Demonstrated effective reduction of optical leakage loss by etching silicon on the sides of the nanowires without complex lithography.
• Numerical simulations confirmed a stable optical guided mode with a low leakage loss of 0.21 cm⁻¹ and an optical confinement factor of 8.8%.

Conclusions:

• A simplified process for reducing optical leakage in III-V nanowires on SOI was successfully developed.
• The approach is suitable for monolithic photonic integration, paving the way for advanced silicon photonics.
• This method enhances the potential for combining the benefits of III-V optoelectronics with silicon-based platforms.