InGaAs/InP multi-quantum-well nanowires with a lower optical leakage loss on v-groove-patterned SOI substrates

InGaAs/InP multi-quantum-well nanowires were directly grown on the v-groove-patterned SOI substrate by metal organic chemical vapor deposition. The surface morphology of the nanowires, the thickness of the quantum wells, and the photoluminescence spectra were characterized by scanning electron microscope, transmission electron microscopy, and micro-photoluminescence, respectively. We found in the experiments that the work of removing part of top Si on both sides of the nanowire to further reduce the optical leakage loss could be completed perfectly without complicated processes, such as a lithography process. Numerical simulations showed that the III-V nanowire was able to support an extraordinarily stable optical guided mode with a lower optical leakage loss of 0.21 cm^-1 when etching away part of top Si on both sides of the nanowire, and the optical confinement factor of the multi-quantum-well active region was about 8.8%. This approach opens up a way for monolithic photonic integration of III-V compound semiconductors on Si to occur.