Solution-Processed Organic Field-Effect Transistors with High Performance and Stability on Paper Substrates

Area of Science:

• Materials Science
• Organic Electronics
• Device Physics

Background:

• Organic field-effect transistors (OFETs) are crucial for flexible electronics.
• Developing stable and high-performance OFETs on low-cost substrates like paper remains a challenge.

Purpose of the Study:

• To fabricate high-performance and operationally stable organic field-effect transistors on a paper substrate.
• To investigate the electrical characteristics and stability of these novel devices.

Main Methods:

• Fabrication of OFETs using a TIPS-pentacene:polystyrene blend active layer and a poly(4-vinylphenol)/HfO2 hybrid gate dielectric on a PowerCoat HD 230 paper substrate.
• Characterization of device performance, including field-effect mobility, threshold voltage, and current on-off ratio.
• Assessment of device stability under gate bias stress, humidity, and ambient storage conditions.

Main Results:

• Achieved excellent p-channel characteristics with high field-effect mobility (up to 0.44 cm2 V-1 s-1) and a current on-off ratio of ~10^5.
• Demonstrated remarkable operational stability under gate bias stress and repeated scans, with negligible performance spread.
• Exhibited stable electrical characteristics after prolonged humidity exposure and an excellent shelf life (>6 months) in ambient conditions.
• Observed performance deterioration under high-temperature thermal stress due to crack formation in the active layer.

Conclusions:

• Successfully fabricated high-performance, stable organic field-effect transistors on paper substrates.
• The developed devices show great promise for flexible electronics, including potential for paper-based phototransistors.
• While stable in humidity and ambient conditions, high-temperature stability needs further improvement.