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Template Directed Synthesis of Plasmonic Gold Nanotubes with Tunable IR Absorbance

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Dirac semimetal saturable absorber with actively tunable modulation depth.

Yue Sun, Yafei Meng, Hongzhu Jiang

|February 1, 2019

Summary

Researchers developed an electrically tunable saturable absorber using topological Dirac semimetal Cd3As2. This device shows a broad modulation depth tuning range, paving the way for new optical applications.

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Area of Science:

Condensed Matter Physics
Materials Science
Optoelectronics

Background:

Topological Dirac semimetals offer unique electronic properties.
Saturable absorbers are crucial components in pulsed laser systems.
Existing saturable absorbers often lack efficient electrical tunability.

Purpose of the Study:

To demonstrate an electrically contacted saturable absorber (SA) device.
To investigate the tunability of the SA device based on topological Dirac semimetal Cd3As2.
To explore the potential of bulk Dirac materials for advanced optical devices.

Main Methods:

Fabrication of an electrically contacted SA device using Cd3As2.
Characterization of the device's modulation depth under femtosecond laser irradiation (1560 nm).
Investigation of current-induced temperature changes (297-336 K) and their effect on device performance.

Main Results:

The Cd3As2-based SA device exhibited significant modulation depth alteration from 33% to 76%.
The broad tuning of modulation depth is linked to the temperature-dependent carrier concentration near room temperature.
The device demonstrated compatibility with III-V compound substrates like GaAs.

Conclusions:

An electrically tunable SA device based on topological Dirac semimetal Cd3As2 was successfully demonstrated.
The strong temperature dependence of carrier concentration provides a simple tuning mechanism.
The material's compatibility suggests potential for broadband, electrically tunable, SESAM-like devices.