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Improvement to the Carrier Transport Properties of CdZnTe Detector Using Sub-Band-Gap Light Radiation

Xiangxiang Luo1, Gangqiang Zha2, Lingyan Xu3

  • 1State Key Laboratory of Solidification Processing, and MIIT Key Laboratory of Radiation Detection Materials and Devices, Northwestern Polytechnical University, Xi'an 710072, China. fuxu_mail@yeah.net.

Sensors (Basel, Switzerland)
|February 3, 2019
PubMed

Keywords:
count ratephoton countingpoint defectssemiconducting II–VI materials

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