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Updated: Jan 29, 2026

On-Chip Crystallization and Large-Scale Serial Diffraction at Room Temperature
Published on: March 11, 2022
A Temperature-Compensated Single-Crystal Silicon-on-Insulator (SOI) MEMS Oscillator with a CMOS Amplifier Chip
Mohammad S Islam1, Ran Wei2, Jaesung Lee3
1Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA. msi16@case.edu.
Abstract:
Self-sustained feedback oscillators referenced to MEMS/NEMS resonators have the potential for a wide range of applications in timing and sensing systems. In this paper, we describe a real-time temperature compensation approach to improving the long-term stability of such MEMS-referenced oscillators. This approach is implemented on a ~26.8 kHz self-sustained MEMS oscillator that integrates the fundamental in-plane mode resonance of a single-crystal silicon-on-insulator (SOI) resonator with a programmable and reconfigurable single-chip CMOS sustaining amplifier. Temperature compensation using a linear equation fit and look-up table (LUT) is used to obtain the near-zero closed-loop temperature coefficient of frequency (TCf) at around room temperature (~25 °C). When subject to small temperature fluctuations in an indoor environment, the temperature-compensated oscillator shows a >2-fold improvement in Allan deviation over the uncompensated counterpart on relatively long time scales (averaging time τ > 10,000 s), as well as overall enhanced stability throughout the averaging time range from τ = 1 to 20,000 s. The proposed temperature compensation algorithm has low computational complexity and memory requirement, making it suitable for implementation on energy-constrained platforms such as Internet of Things (IoT) sensor nodes.
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