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David C Look1,2, Kevin D Leedy3

  • 1Semiconductor Research Center, Wright State University, Dayton, OH, 45435, USA. david.look@wright.edu.

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|February 6, 2019
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We developed a single temperature-dependent function to model the complex phonon structure in silicon-doped Gallium Oxide (β-Ga2O3) and understand its conductivity. This approach successfully explains both quantum and classical scattering in disordered semiconductors.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Physics

Background:

  • Gallium Oxide (β-Ga2O3) is a promising semiconductor with a complex phonon structure due to its ten atoms per unit cell.
  • Understanding charge transport in doped semiconductors like β-Ga2O3 is crucial for device applications.
  • Doping disorder further complicates the phonon spectrum, impacting conductivity measurements.

Purpose of the Study:

  • To investigate the conductivity, magnetoconductivity, and Hall coefficient of degenerate, homoepitaxial, (010) Si-doped β-Ga2O3.
  • To explore a unified model for scattering theory that incorporates a temperature-dependent characteristic phonon temperature (Tpo).
  • To determine if a single Tpo(T) function can accurately describe the temperature dependence of conductivity and magnetoconductivity across different semiconductor materials.

Main Methods:

  • Measurements of conductivity (σ), quantum-based magnetoconductivity (Δσ), and Hall coefficient (RH) were performed on Si-doped β-Ga2O3 from 9-320 K and 0-10 kG.
  • A novel temperature-dependent phonon model, Tpo(T) = 1.6 × 10^3{1 - exp[-(T + 1)/170]} K, was developed and applied.
  • The model's effectiveness was compared with data from degenerate Scandium Nitride (ScN), a material with a simpler phonon structure.

Main Results:

  • A simple, single function Tpo(T) effectively described the conductivity and magnetoconductivity of Si-doped β-Ga2O3 without additional fitting parameters.
  • In contrast, ScN required a constant Tpo = 550 K for similar fitting accuracy, highlighting the impact of complex phonon structures.
  • The study demonstrates that quantum conductivity measurements can provide insights into classical conductivity in disordered, multi-phonon systems.

Conclusions:

  • A unified temperature-dependent phonon model successfully explains charge transport in complex semiconductors like β-Ga2O3.
  • Quantum conductivity provides a powerful tool for understanding classical transport phenomena in disordered materials.
  • The findings pave the way for improved modeling of electronic properties in advanced semiconductor materials.