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Equilibrium crystal shape of GaAs and InAs considering surface vibration and new (111)B reconstruction: ab-initio
In Won Yeu1,2, Gyuseung Han1,2, Jaehong Park1,2
1Center for Electronic Materials, Korea Institute of Science and Technology, Seoul, 02792, Korea.
Abstract:
This work reports on the theoretical equilibrium crystal shapes of GaAs and InAs as a function of temperature and pressure, taking into account the contribution of the surface vibration, using ab-initio thermodynamic calculations. For this purpose, new (111)B reconstructions, which are energetically stable at a high temperature, are suggested. It was found that there was a feasible correspondence between the calculated equilibrium shapes and the experimental shapes, which implied that the previous experimental growth was performed under conditions that were close to equilibrium. In this study, GaAs and InAs were selected as prototype compound semiconductors, but the developed calculation methodology can also be applied to other III-V compound semiconductor materials.
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